PMF2000 GFET Quad Pack
PMF2000 GFET Quad Pack
The PMF2000 GFET is Paragraf’s next‑generation graphene field‑effect transistor, succeeding the PV01 platform. Manufactured using Paragraf’s proprietary direct‑growth process, it features polymer‑free graphene channels for high consistency and reproducibility.
Designed for sensing and research applications, the device includes three independent graphene channels arranged around an in‑plane gate electrode for a homogeneous electric field. An epoxy encapsulation layer enables reliable liquid handling and channel‑specific functionalisation, supporting multiplexed sensing and internal referencing.
Compatible with standard data acquisition systems, the PMF2000 is ideal for advanced GFET sensor development.
We recommend pairing the PMF2000 GFET Quad Pack with our PiG Breakout Board, available here.
Documentation
Documentation
Specification
Specification
The PMF2000 GFET quad pack includes 4 PMF2000 units.
No of GFET channels: 3
Dirac Point (mV): 700 mV ±150 mV
Transconductance (mS•sq/V): 0.8 mS•sq/V (typical)
Channel resistance (kOhm): 1 - 3.5 kOhm
Metallisation: 120 nm total - Platinum exposed surface
Full specification available soon - contact us for more details
Shipping estimates
Shipping estimates
Lead time: Up to 30 business days
UK Standard: 1-2 Business Days
EU Standard International: 2-4 Business Days
RoW Standard International: 2-6 Business Days
BY PURCHASING ANY PARAGRAF PRODUCTS THROUGH THIS WEBSITE, you hereby agree to and accept our terms and conditions.
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Paragraf produces a range of hall effect sensors and GFETs for different customers, please contact us with your specific requirments
