Cryogenic High Magnetic Field Graphene Hall Sensor - EGHSX01Q02
Cryogenic High Magnetic Field Graphene Hall Sensor - EGHSX01Q02
The Paragraf Cryogenic – High Field Graphene Hall sensor is designed for use in ultra-low cryogenic temperatures and high field environments: it can measure magnetic fields up to the 10s of Tesla, and still operates down at mK temperatures.
We recommend pairing the Cryogenic High Magnetic Field Graphene Hall Sensor - EGHSX01Q02 with our Multi-Sensor Test Unit, available here.
Documentation
Documentation
Specification
Specification
Package: 3x3mm² 8-pin QFN, ceramic, Ni-free, surface mount
Active area: <100μm²
Sensing Range: ± 30 T
Sensitivity (V/AT): 200
Min. Temp: <1K
Max. Temp: 350K
Shipping estimates
Shipping estimates
Lead time: Up to 30 business days
UK Standard: 1-2 Business Days
EU Standard International: 2-4 Business Days
RoW Standard International: 2-6 Business Days
BY PURCHASING ANY PARAGRAF PRODUCTS THROUGH THIS WEBSITE, you hereby agree to and accept our terms and conditions.
Couldn't load pickup availability
Share
If you don't see what you need, ask us
Paragraf produces a range of Graphene Hall Effect Sensors (GHS) and Graphene Field Effect Transistors (GFET) for different customers, please contact us with your specific requirments
