Cryogenic Low Magnetic Field Graphene Hall Sensor - EGHSX03Q02
Cryogenic Low Magnetic Field Graphene Hall Sensor - EGHSX03Q02
The Paragraf Cryogenic – Low Field Graphene Hall sensor is designed for use in extreme cryogenic environments with high sensitivities. It can operate down to mK temperatures while keeping very high sensitivity.
We recommend pairing the Cryogenic Low Magnetic Field Graphene Hall Sensor - EGHSX03Q02 with our Multi-Sensor Test Unit, available here.
Documentation
Documentation
Specification
Specification
Package: 3x3mm² 8-pin QFN, ceramic, Ni-free, surface mount
Active area: <100μm²
Sensing Range: ± 0.5 T
Sensitivity (V/AT): 1700
Min. Temp: <1K
Max. Temp: 350K
Shipping estimates
Shipping estimates
Lead time: Up to 30 business days
UK Standard: 1-2 Business Days
EU Standard International: 2-4 Business Days
RoW Standard International: 2-6 Business Days
BY PURCHASING ANY PARAGRAF PRODUCTS THROUGH THIS WEBSITE, you hereby agree to and accept our terms and conditions.
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Paragraf produces a range of Graphene Hall Effect Sensors (GHS) and Graphene Field Effect Transistors (GFET) for different customers, please contact us with your specific requirments
